
The program covers the following seven research areas necessary to develop and demonstrate the full capabilities of spintronics based CMOS VLSIs.
Spintronics materials
- Advanced spintronics device materials for VLSI
- High thermal stability spintronics materials for ultimate scaling
- Spintronics material technology for leading edge wafer scale processing
- Tunnel barrier technology for low resistance devices
Spintronics devices
- Physics and technology of spin torque, switching probability, write cycle endurance, and ultrafast magnetization reversal
- Spintronics devices with low write current, high thermal stability, high TMR, and high reliability
- Nano-spintronics devices
New spintronics materials and devices
- New spintronics material and device structures
- Magnetic materials and devices for electric-field control
- Semiconductor spintronic materials and devices
Spintronics processing
- Leading edge wafer processing at Tsukuba Innovation Arena (TIA)
- Nano-device processing at Tohoku University
- Device processing technology embedded in leading edge Si process

Spintronics logic design and IP development
- Design and verification of spintronics logic integrated circuits
- Design for high-speed and stable operation of spintronics VLSI
Design tool development for spintronics VLSI
- Design flow of spintronics VLSI
- Design tool of spintronics VLSI
Spintronics VLSI demonstration
- Spintronics VLSI demonstration
- Education and training for spintronics VLSI


Center for Spintronics Integrated Systems, Tohoku University
2-1-1 Katahira, Aoba, Sendai, Miyagi 980-8577 Japan
TEL : +81-(0)22-217-6116
E-mail : sien
csis.tohoku.ac.jp