東北大学 省エネルギー・スピントロニクス集積化システムセンター
学会発表
International Conferences
| 1 | H. Sato, K. Mizunuma, S. Ikeda, K. Miura, H. Yamamoto, J. Hayakawa, H. D. Gan, M. Yamanouchi, F. Matsukura, and H. Ohno, Materials design of MgO barrier magnetic tunnel junctions, International Symposium on Innovative Nanoelectronics and Systems, Feb.16, 2011. |
| 2 | H. D. Gan, S. Ikeda, M. Yamanouchi, H. Sato, K. Miura, K. Mizunuma, H. Yamamoto, R. Koizumi, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, High performance magnetic tunnel junctions with 40 nmφ, International Symposium on Innovative Nanoelectronics and Systems, Feb.16, 2011. |
| 3 | S. Matsunaga, A. Katsumata, M. Natsui, and T. Hanyu, Design of a Low-Energy Nonvolatile Fully-Parallel Ternary CAM Using a Two-Level Segmented Match-Line Scheme, IEEE 41st International Symposium on Multiple-Valued Logic (ISMVL 2011), Feb. 4, 2011. |
| 4 | H. Sato, R. Koizumi, M. Yamanouchi, S. Ikeda, K. Miura, K. Mizunuma, H. D. Gan, F. Matsukura, and H. Ohno, Annealing effect on perpendicular magnetic anisotropy of CoFeB/MgO structure, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 5 | H. D. Gan, S. Ikeda, M. Yamanochi, K. Mizunuma, K. Miura, F. Matsukura, and H. Ohno, Influence of Boron composition on tunnel magnetoresistance properties of double-MgO-barrier magnetic tunnel junctions, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 6 | K. Mizunuma, M. Yamanouchi, S. Ikeda, H. Sato, H. Yamamoto, H..D. Gan, K. Miura, J. Hayakawa, F. Matsukura, and Hideo Ohno, Annealing stability for tunnel magnetoresistance in MgO-CoFeB based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 7 | M. Oogane, T. Kubota, Y. Kota, S. Mizukami, H. Naganuma, A. Sakuma and Y. Ando, Gilbert magnetic damping constant of Co-based Heusler alloy thin films, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 8 | Hiroshi Naganuma, Mikihiko Oogane, and Yasuo Ando, Exchange bias of multiferroic BiFeO3 epitaxial films, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 9 | Nobuhito Inami, Hiroshi Naganuma, Mikihiko Oogane, Yasuo Ando, Shoji Ikeda, and Hideo Ohno, Spin torque diode effect of magnetic tunnel junction with synthetic ferrimagnetic free layer, IEEE International Magnetics Conference, Feb. 3, 2011. |
| 10 | Tetsuo Endoh, S. Ikeda, T. Hanyu, N.Kasai and H.Ohno, Nonvolatile computer systems and memory hierarchy transformation with STT RAM technology, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 11 | H. Yamamoto, K. Ono, T. Morita, S. Ikeda,, H. Ohno, A post oxidation process of Mg layer for MgO barrier magnetic tunnel junctions, 1st CSIS International Symposium on Spintronics-based VLSIs and 7th RIEC International Workshop on Spintronics, Feb. 3, 2011. |
| 12 | Nobuhito Inami, Hiroshi Naganuma, Mikihiko Oogane, Yasuo Ando, Shoji Ikeda, Hideo Ohno, Influence of magnetic field on spin torque diode effect in magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic layer, ICAUMS2010, Dec. 8, 2010. |
| 13 | K. Mizunuma, S. Ikeda, M. Yamanouchi, H. Yamamoto, H. D. Gan, K. Miura, R. Koizumi, J. Hayakawa, F. Matsukura, and H. Ohno, Stack structures for realization of high annealing stability in perpendicular magnetic tunnel junctions with CoFe/Pd multilayer electrodes, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.18, 2010. |
| 14 | H. Naganuma, M. Oogane, Y. Ando, Exchange biases of Co, Py, Co40Fe40B20, Co75Fe25, and Co50Fe50 on epitaxial BiFeO3 films prepared by chemical solution deposition, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.18, 2010. |
| 15 | T. Aoki, Y. Ando, T. Oka, M. Oogane, H. Naganuma, Single shot measurement of inhomogeneous magnetization behavior in the ns spin-transfer switching for MgO-based magnetic tunnel junctions, 55th Annual Conference on Magnetism and Magnetic Materials, Nov. 17, 2010. |
| 16 | M. Tsujikawa, Y. Miura, M. Shirai, T. Oda, Electric field effects on magnetic anisotropy in MgO/Pt/Fe/Pt (001): A density-functional study, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.16, 2010. |
| 17 | N. Inami, H. Naganuma, M. Oogane, Y. Ando, S. Ikeda, H. Ohno, Spin-torque diode effect in magnetic tunnel junctions with synthetic ferrimagnetic layers, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.16, 2010. |
| 18 | M. Yamanouchi, R. Koizumi, S. Ikeda, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, and H. Ohno, The dependence of the magnetic anisotropy on buffer layer and MgO thickness in Co20Fe60B20/MgO structures for magnetic tunnel junction, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.16, 2010. |
| 19 | H. Yamamoto J. Hayakawa, K. Ito, K. Miura, H. Matsuoka, S. Ikeda and H. Ohno, Control of magnetic anisotropy in CoFeB by capping layer for current induced magnetization switching, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.15, 2010. |
| 20 | K. Miura, S. Ikeda, M.Yamanouchi, H.Yamamoto, K. Mizunuma, H. Gan, J. Hayakawa, R. Koizumi, M. Endo, S. Kanai, F. Matsukura and H. Ohno, Large tunnel magnetoresistance, low current switching and high thermal stability in CoFeB/MgO based magnetic tunnel junctions with perpendicular anisotropy of 40-nm scale, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.15, 2010. |
| 21 | Y. Miura, K. Abe, M. Shirai, A first-principles study on interfacial spin-flip scattering in magnetic tunnel junctions with half-metals, 55th Annual Conference on Magnetism and Magnetic Materials, Nov.15, 2010. |
| 22 | K. Mizunuma, S. Ikeda, M. Yamanouchi, H. Yamamoto, H. D. Gan, K. Miura, R. Koizumi, J. Hayakawa, F. Matsukura, and H. Ohno, TMR properties and annealing stability in MgO barrier MTJs with CoFe/Pd perpendicular anisotropy multilayer electrodes, The 3rd Student Organizing International Mini-Conference on Information Electronics Systems, Oct.20, 2010. |
| 23 | Keizo Kinoshita, Katsumi Suemitsu, Norikazu Ohshima, Nobuyuki Ishiwata, and Tadahiko Sugibayashi, Damage Diffusion Model of Alcohol-based Plasma Etching for Magnetic Materials, ICRP-7/GEC-63/SPP-28, Oct.6, 2010. |
| 24 | Shinsuke Yada, Ryohei Okazaki and Masaaki Tanaka, Large magnetoresistance of Ge1-xMnx single films and heterostructures with magnetic nanocolumns, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sep.24, 2010. |
| 25 | D. Suzuki, M. Natsui, H. Ohno, and T. Hanyu, Design of a Process-Variation-Aware Nonvolatile MTJ-Based Lookup-Table Circuit, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sep.24, 2010. |
| 26 | S. Matsunaga, M. Natsui, H. Ohno, and T. Hanyu, Power-Aware Bit-Serial Binary Content-Addressable Memory Using Magnetic-Tunnel-Junction-Based Fine-Grained Power-Gating Scheme, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sep. 23, 2010. |
| 27 | H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, F. Matsukura, T. Ohkubo, K. Hono, H. Ohno, Tunnel magnetoresistance properties of double MgO-barrier magnetic tunnel junctions with different free-layer alloy compositions and structures, 2010 IEEE 7th International Symposium on Metallic Multilayers (MML2010), Sep.19-24, 2010. |
| 28 | M. Tsujikawa, Y. Miura, M. Shirai, T. Oda, Electric field effects on magnetic anisotropy of ferromagnetic/dielectric film, Ψk Conference 2010, Sep.14, 2010. |
| 29 | Y. Miura, K. Abe, M. Shirai, Effect of interfacial non-collinear magnetic structures on spin-mixing conductance in magnetic tunnel junctions with half-metals, Ψk Conference 2010, Sep.14, 2010. |
| 30 | S. Ohya, K. Takata and M. Tanaka, Resonant Tunneling in a GaMnAs Surface Quantum Well and Its Valence-Band Picture, 16th International Conference on Molecular Beam Epitaxy, Berlin, Aug. 24, 2010. |
| 31 | F. Matsukura, A. Fukunaga, S. Koike, M. Endo, S. Ikeda, and H. Ohno, Inverse spin Hall effect in a (Ga,Mn)As/p-GaAs bilayer structure, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 4, 2010. |
| 32 | P. N. Hai, S. Ohya, and M. Tanaka, Spin-dependent Transport and Long Spin-Relaxation Time in a Hexagonal MnAs Nanoparticle, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 4, 2010. |
| 33 | S. Ohya, I. Muneta. P. N. Hai, and M. Tanaka, Fermi Level Position and Valence-Band Structure in GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug.4, 2010. |
| 34 | A. M. Nazmul, S. Ghosh, S. Ohya, and M. Tanaka, Control of ferromagnetism by light irradiation in a Mn-delta-doped GaAs/p-AlGaAs heterostructure, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 3, 2010. |
| 35 | S. Sato, R. Nakane, S. Kokutani, and M. Tanaka, Influence of anisotropic magnetoresistance on nonlocal signals in multi-terminal lateral devices with a Si channel and Fe electrodes, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 3, 2010. |
| 36 | S. Yada, R. Okazaki, S. Ohya, and M. Tanaka, Magnetic and structural properties of Ge1-xMnx films grown on Ge (111) substrates, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 3, 2010. |
| 37 | D. Chiba, K. Kobayashi, T. Ono, F. Matsukura, and H. Ohno, Electric field induced magnetization switching in a (Ga,Mn)As field effect structure, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 3, 2010. |
| 38 | I. Muneta, S. Ohya, and M. Tanaka, Spin-dependent transport in GaMnAs-based double-quantum-well resonant-tunneling diodes, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 2, 2010. |
| 39 | S. Ohya, K. Takata, M. Tanaka, Universal Valence-Band Picture of GaMnAs with High Curie Temperature, The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors （PASPS－Ⅵ）, Aug. 2, 2010. |
| 40 | M. Endo, F. Matsukura, and H. Ohno, Characterization of spin-orbit interaction induced effective magnetic fields in (Ga,Mn)As by resistance polar plot, 30th International Conference on the Physics of Semiconductors (ICPS2010), July 27, 2010. |
| 41 | M. Endo, F. Matsukura, and H. Ohno, Magnetization reversal in (Ga,Mn)As by using spin-orbit interaction effective field, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2010), July 16, 2010. |
| 42 | M. Tsujikawa, S. Haraguchi, T. Oda, Y. Miura, M. Shirai, Electric-field effect on magnetic anisotropy in the thin films: A first-principles study, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2010), July 15, 2010. |
| 43 | S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno, Magnetic anisotropy modulation in Ta/CoFeB/MgO structure by electric fields, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2010), July 14, 2010. |
| 44 | T.Aoki, Y.Ando, M.Oogane, and H.Naganuma, Dynamic intermediate state during ns spin-transfer switching for MgO-based magnetic tunnel junctions. International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2010), July 14, 2010. |
| 45 | T.Aoki, Y.Ando, M.Oogane, and H.Naganuma, Thermal effect on sub-ns spintransfer switching for MgO-based magnetic tunnel junctions, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2010), July 14, 2010. |
| 46 | E. Ozawa, S. Tsunegi , M. Oogane and Y. Ando, The effect of inserting thin Co2MnAl layer into the Co2MnSi/MgO interface on TMR effect, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2010), July 14, 2010. |
| 47 | M. Oogane, S. Tsunegi, E. Ozawa, H. Naganuma, and Y. Ando, Tunnel magnetoresistance effect in magnetic tunnel junctions with very thin insertion layer, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2010), July 14, 2010. |
| 48 | Y. Kuwahara, Y. Miura, K. Abe, M. Shirai, Magnetic anisotropy of L10-ordered alloy FeNi: A first-principles study, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2010), July 14, 2010. |
| 49 | Y. Miura, K. Abe, M. Shirai, The effect of non-collinear magnetic structures at the interfaces in Co2MnSi/MgO/Co2MnSi tunnel junctions, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2010), July 14, 2010. |
| 50 | K. Mizunuma, S. Ikeda, H. Yamamoto, H. D. Gan, K. Miura, J. Hayakawa, K. Ito, F. Matsukura and H. Ohno, TMR Properties of Perpendicular MTJs with Thin Pd Based Multilayers, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2010), July 14, 2010. |
| 51 | H. D. Gan, S. Ikeda, J. Hayakawa, H. Yamamoto, K. Miura, K. Mizunuma, H. Hasegawa, F. Matsukura and H. Ohno, Current-induced magnetization switching in MTJs with high TMR ratio, International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2010), July 13, 2010. |
| 52 | Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na, Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, July 2, 2010. |
| 53 | Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh, Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, July 2, 2010. |
| 54 | Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muragudhi, Takuya Imamoto, Takeshi Sasaki, The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, July 2, 2010. |
| 55 | T. Ishigaki, T. Kawahara, R. Takemura, K. Ono, K. Ito, H. Matsuoka, and H. Ohno, A Multi-Level-Cell Spin-Transfer Torque Memory with Series-Stacked Mangetotunnel Junctions, 2010 Symposia on VLSI Technology and Circuits, June 15, 2010. |
| 56 | M. Endo, F. Matsukura, and H. Ohno, Magnetization manipulation in (Ga,Mn)As by SOI induced effective magnetic field, The 37th International Symposium on Compound Semiconductors (ISCS2010), June 1, 2010. |
| 57 | M. Natsui and T. Hanyu, Process-Variation-Aware VLSI Design Using an Emerging Functional Devices and Its Impact, 19th International workshop on Post-Binary ULSI Systems, May 24, 2010. |
東北大学
省エネルギー・スピントロニクス
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東北大学 省エネルギー・スピントロニクス集積化システムセンター