1 | D. Suzuki, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Variation-Resilient Single-Ended Nonvolatile 6-Input Lookup Table Circuit with a Redundant-MTJ-Based Active Load for Smart IoT Applications", IET Electronics Letters, Vol. 53, no. 7, pp. 456-458, March 30, 2017. (doi:10.1049/el.2016.4233) |
2 | A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos, "Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy", Proceedings of the National Academy of Sciences of the United States of America, PNAS Early Edition, March 24, 2017. (doi:10.1073/pnas.1613864114) |
3 | D. Suzuki, and T. Hanyu, "Design of a low-power nonvolatile flip-flop using three-terminal magnetic-tunnel-junction-based self-terminated mechanism", Japanese Journal of Applied Physics, Vol. 56, no. 4S, pp. 04CN06~1-04CN06~4, March 6, 2017. (doi:10.7567/JJAP.56.04CN06) |
4 | A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno, "Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures", Applied Physics Letters, Vol. 110, 092410, March 1, 2017. (doi:10.1063/1.4977838) |
5 | M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction", Japanese Journal of Applied Physics, Vol. 56, no. 4S, pp. 04CN01~1-04CN01~5, February 16, 2017. (doi:10.7567/JJAP.56.04CN01) |
6 | S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno, "Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO", AIP Advances, Vol. 7, 055918, January 20, 2017. (doi:10.1063/1.4974889) |
7 | M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance", Applied Physics Express, Vol. 10, 013001, December 1, 2016. (doi:10.7567/APEX.10.013001) |
8 | C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno, "Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO", Applied Physics Letters, Vol. 109, 192405, November 8, 2016. (doi:10.1063/1.4967475) |
9 | T. Hanyu, T. Endoh, D. Suzuki, H. Koike, Y. Ma, N. Onizawa, M. Natsui, S. Ikeda, and H. Ohno, "Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing", Proceedings of the IEEE, Vol. 104, No. 10, pp. 1844-1863, September 7, 2016. (doi:10.1109/JPROC.2016.2574939) |
10 | S. Ishikawa, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Current-Induced Magnetization Switching of CoFeB/Ta/ [Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy", IEEE Transactions on Magnetics, Vol. 52, No. 7, 3400704, June 22, 2016. (doi:10.1109/TMAG.2016.2517098) |
11 | K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo)", IEEE Transactions on Magnetics, Vol. 52, No. 7, 3400904, June 22, 2016. (doi:10.1109/TMAG.2016.2514525) |
12 | T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno, "An Overview of Nonvolatile Emerging Memories —Spintronics for Working Memories—", IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), Vol. 6, No.2, pp. 109-119, June 9, 2016. (doi:10.1109/JETCAS.2016.2547704) |
13 | E. Hirayama, H. Sato, S. Kanai, F. Matsukura, and H. Ohno, "Magnetic Field and Current Magnetization Reversal in Elliptic CoFeB/MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis", IEEE Magnetics Letters, Vol. 7, pp. 3104004, May 12, 2016. (doi:10.1109/LMAG.2016.2568163) |
東北大学
省エネルギー・スピントロニクス
集積化システムセンター支援室
〒980-8577
宮城県仙台市青葉区片平2-1-1
TEL : 022-217-6116
E-mail : siencsis.tohoku.ac.jp
Copyright (c) Center for Spintronics Integrated Systems, Tohoku University All Rights Reserved.
東北大学 省エネルギー・スピントロニクス集積化システムセンター