1 | H. Ohno, "Efficiency of Spintronic Nanodevices", Spintronics Meeting in Lanna, Vila Lanna, Prague, Czech Republic, 2016/3/31. |
2 | H. Ohno, "Two-and Three-terminal Spintronics Devices", 2nd CIES Technology Forum, Sendai, Japan, 2016/3/17. |
3 | T. Hanyu, "Spintronics-Based Logic-in-Memory Architecture Towards Dark Silicon Era," International Workshop: Spintronics VLSI", International Workshop: Spintronics VLSI, Senda, Japan, 2015/11/21. |
4 | S. Fukami, C. Zhang, S. DuttaGupta, Aleksandr Kurenkov, and Hideo Ohno, "Spin-orbit torque switching for three-terminal spintronics devices", 13th RIEC International Workshop on Spintronics, Sendai, Japan, 2015/11/19. |
5 | H. Sato, E.C.I. Enobio, N. Ohshima, S. Fukami1, F. Matsukura, and H. Ohno, "Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions for low power consumption non-volatile VLSI", 3rd Tohoku University ・KTH joint workshop, KTH, Sweden, 2015/11/13. |
6 | S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, F. Matsukura, and H. Ohno, "Universality class for adiabatic spin-transfer torque induced domain wall creep in magnetic metal", JSPS Core-to-Core Workshop on New-Concept Spintronic Devices, Sendai, Japan, 2015/11/13. |
7 | H. Ohno, "Spintronics materials and devices for nonvolatile CMOS VLSIs", 16th RIES-Hokudai International Symposium, Sapporo, Japan, 2015/11/11. |
8 | E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Improving the sensitivity of vector-network-analyzer ferromagnetic resonance measurement by varying the coplanar waveguide size", 2015 International Conference on Applied Materials and Optical Systems (ICAMOS), CvSU, The Philippines, 2015/10/22. |
9 | H. Ohno, "Spintronics Nano-Devices for Nonvolatile VLSIs", Electrical and Computer Engineering and Materials University of California & California NanoSystems Institute (CNSI)合同セミナー, University of California, Santa Barbara, 2015/10/15. |
10 | T. Hanyu, M. Natsui, D. Suzuki, A. Mochizuki, N. Onizawa, S. Ikeda, T. Endoh and H. Ohno, "Challenge of MTJ-Based Nonvolatile Logic-in-Memory Architecture for Ultra Low-Power and Highly Dependable VLSI Computing", 2015 IEEE S3S Conference, San Francisco, CA, USA, 2015/10/6. |
11 | H. Sato, E.C.I. Enobio, S. Fukami, F. Matsukura, and H. Ohno, "Properties of perpendicular-anisotropy magnetic tunnel junctions with single and double CoFeB-MgO interface", 6th Annual Conference on Magnetics, NTU, Singapore, 2015/10/2. |
12 | S. Fukami, H. Sato, and H. Ohno, "Spintronics memory devices for ultralow-power and high-performance integrated circuits", 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo Convention Center, Sapporo, Japan, 2015/9/29. |
13 | H. Ohno, "Nonvolatile VLSI Made Possible by Spintronics", 4th Winton Symposium, Cambridge, UK, 2015/9/28. |
14 | H. Ohno, "Spintronics Nano-Devices for Nonvolatile VLSIs", 12th Sweden-Japan QNANO Workshop, Hindas, Sweden, 2015/9/24. |
15 | S. Fukami, H. Ohno, "Spin-orbit torque induced magnetization switching for three-terminal spintronics devices", 2nd Spin, Waves and Interactions, Greifswald, Germany, 2015/9/10. |
16 | H. Ohno, "Nano-Spintronics Devices for VLSI Integration", Gordon Research Conference, Hong Kong University of Science and Technology, 2015/7/26. |
17 | H. Ohno, "Nanoscale Spintronics Materials and Devices", ICMAT2015 & IUMRS-ICA2015, Singapore, 2015/7/2. |
18 | H. Ohno, "Spintronics for Stand-by Power Free VLSI", ICMAT2015 & IUMRS-ICA2015, Singapore, 2015/7/1. |
19 | T. Hanyu, "Challenge of MOS/MTJ‐Hybrid Integrated Circuits Based on Non‐Volatile Logic‐in‐Memory Architecture", 2015 Spintronics Workshop on LSI, Kyoto, Japan, 2015/6/15. |
20 | H. Sato, Y. Takeuchi, N. Ohshima, S. Kubota, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Properties of CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis for spintronics based VLSI applications", 2015 Spintronics workshop on LSI, Kyoto, Japan, 2015/6/15. |
21 | H. Ohno, "Nanoscale Magnetic Tunnel Junction", York-Tohoku-Kaiserslautern Symposium on New-Concept Spintronics Devices, York, UK, 2015/6/12. |
22 | H. Ohno, "Nano-Scale Magnetic Tunnel Junction Materials and Devices - Toward Nonvolatile VLSI -", International Conference Spin Physics, Spin Chemistry and Spin Technology, Saint Petersburg, Russia, 2015/6/4. |
23 | H. Ohno, "Nanoscale magnetic tunnel junction", 5th STT-MRAM Global Innovation Forum, Tokyo, Japan, 2015/5/27. |
24 | H. Ohno, "Spintronic nano-devices for nonvolatile VLSIs", Frontiers in Quantum Materials and Devices & Tohoku/Harvard Workshop, Boston, U.S.A., 2015/5/21. |
25 | H. Ohno and S. Fukami, "Three-terminal spintronics memory devices with perpendicular anisotropy", IEEE International Magnetics Conference (INTERMAG 2015), Beijing, China, 2015/5/15. |
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東北大学 省エネルギー・スピントロニクス集積化システムセンター