*Peer Reviewed Paper
*1 | S. Matsunaga, A. Mochizuki, N. Sakimura, R. Nebashi, T. Sugibayashi, T. Endoh, H. Ohno and T. Hanyu, "Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme", IEICE Electronics Express, (to be published). |
*2 | S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, and H. Ohno, "Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combing spin-transfer torque and electric field-effect ", Applied Physics Letters, (to be published). |
*3 | H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka, R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura, T. Sugibayashi, N. Kasai, and H. Ohno, "Material stack design with high tolerance to process induced damage in domain wall motion device", IEEE Transactions on Magnetics, (to be published). |
*4 | D. Suzuki, M. Natsui, A. Mochizuki, and T. Hanyu, "Cost Efficient Self-Terminated Write Driver for Spin -Transfer- Torque RAM and Logic", IEEE Transactions on Magnetics, (to be published). |
*5 | M. Hayashi, J. Kim, M. Yamanouchi, H. Ohno, "Quantitative characterization of the spin orbit torque using harmonic Hall voltage mesurements", Physical Review B, Vol. 89, pp 144425 (1)-(15), Apr. 29, 2014. |
*6 | P. N. Hai, D. Maruo, and M. Tanaka, "Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes", Applied Physics Letters, Vol. 104, Issue12, pp. 122409 (1)-(5), Mar. 27, 2014. |
*7 | H. Honjo, S. Fukami, K. Ishihara, R. Nebashi, K. Kinoshita, K. Tokutome, M. Murahata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, and H. Ohno, "Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer", Journal of Applied Physics, Vol. 115, p. 17B750, Mar. 25, 2014. |
*8 | H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell", Japanese Journal of Applied Physics (JJAP), Vol. 53, 04ED13, Mar. 24, 2014. |
*9 | H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/ CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability", Journal of the Magnetics Society of Japan, Vol. 38, No.2-2, pp. 56-60, Mar. 20, 2014. |
*10 | N. T. Tu, L. D. Anh, P. N. Hai, M. Tanaka, "Epitaxial Growth and Characterization of n-type Magnetic Semiconductor (In,Co)As", Japanese Journal of Applied Physics, Vol. 53, No.4S, pp. 04EM05 (1)-(5), Mar. 14, 2014. |
*11 | D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, S. Fukami, H. Sato, S. Ikeda, T. Endoh, H. Ohno, and T. Hanyu, "Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure", Journal of Applied Physics, Vol. 115, pp. 17B742 (1)-(3), Mar. 13, 2014. |
*12 | Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, K.-J. Kim, T. Moriyama, and T. Ono, "Effect of spin Hall torque on current-induced precessional domain wall motion", Applied Physics Express, Vol. 7, pp. 033005 (1)-(4), Mar. 5, 2014. |
*13 | K. Kinoshita, H. Honjo, S. Fukami, R. Nebashi, K. Tokutome, M. Murahata, S. Miura, N. Kasai, S Ikeda, and H. Ohno, "Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion", Japanese Journal of Applied Physics, Vol. 53, No. 3S, p. 03DF03, Mar. 5, 2014. |
*14 | T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal-oxide-semiconductor/magnetic tunnel junction hybrid latches", Journal of Applied Physics, Vol. 115, 17C728 (1)-(3), Feb. 28, 2014. |
*15 | D. Suzuki, M. Natsui, A. Mochizuki , and T. Hanyu, "Design and Evaluation of a 67% Area-Less 64-bit Parallel Reconfigurable 6-Input Nonvolatile Logic Element Using Domain-Wall Motion Devices", Japanese Journal of Applied Physics, Vol. 53, No. 4S, pp. 04EM03 (1)-(5), Feb. 27, 2014. |
*16 | S. Fukami, M. Yamanouchi, Y. Nakatani, K.-J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, and H. Ohno, "Distribution of critical current density for magnetic domain wall motion", Journal of Applied Physics, Vol. 115, 17D508 (1)-(3), Feb. 24, 2014. |
*17 | T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories", Japanese Journal of Applied Physics, Vol. 53, 04ED04 (1)-(10), Feb. 17, 2014. |
*18 | T. Hanyu, "Challenge of MTJ Based Nonvolatile Logic in Memory Architecture for Dark Silicon Logic LSI", SPIN, Vol. 3, no. 4, pp. 1340014 (1)-(8), Feb. 17, 2014. |
*19 | H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, and H. Ohno, "Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs", Japanese Journal of Applied Physics, Vol. 53, 04EM02 (1)-(3), Feb. 12, 2014. |
*20 | T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions", Japanese Journal of Applied Physics, Vol. 53, 04ED03 (1)-(6), Feb. 12, 2014. |
*21 | S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer", Journal of Applied Physics, Vol. 115, 17C719 (1)-(3), Feb. 3, 2014. |
*22 | L. D. Anh, P. N. Hai, and M. Tanaka, "Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells", Applied Physics Letters, Vol. 104, Issue4, pp. 042404 (1)-(5), Jan. 30, 2014. |
*23 | C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura and H. Ohno, "Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis", Jounal of Applied Physics, Vol. 115, 17C714 (1)-(3), Jan. 29, 2014. |
*24 | S. Matsunaga, A. Mochizuki, T. Endoh, H. Ohno and T. Hanyu, "Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme", IEICE Electronics Express (ELEX), Vol. 11, No. 3, pp. 20131006 (1)-(10), Jan. 15, 2014. |
*25 | M. Tanaka, S. Ohya, and P. N. Hai (invited), "Recent progress in III-V based ferromagnetic semiconductors: Band structure, fermi level, and tunneling transport", Applied Physics Reviews, Vol. 1, Issue1, pp. 011102 (1)-(26), Jan. 8, 2014. |
*26 | C. Zhang, M.Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, "Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO", Applied Physics Letters, Vol. 103, pp. 262407 (1)-(3), Dec. 31, 2013. |
*27 | L. Chen, S. Ikeda, F. Matsukura, and H. Ohno, "DC voltages in Py and Py/Pt under ferromagnetic resonance", Applied Physics Express, Vol 7, pp. 013002 (1)-(4), Dec. 30, 2013. |
*28 | Y. Miura, M Shirai, "Theoretical study on tunneling magnetoresistance of magnetic tunnel junctions with D022-Mn3Z (Z = Ga, Ge)", IEEE Transactions on Magnetics, Vol. 50, pp. 1400504 (1)-(4), Dec. 23, 2013. |
*29 | S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric field-induced magnetization switching in CoFeB-MgO - Static magnetic field angle dependence", IEEE Transactions on Magnetics, Vol. 50, pp. 4200103 (1)-(3), Dec. 23, 2013. |
*30 | D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, K. Kinoshita, H. Sato, S. Ikeda, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications", IEICE Electronics Express (ELEX), Vol. 10. No. 23 pp. 20130772 (1)-(9), Dec. 10, 2013. |
*31 | H. W. Chang, S. Akita, F. Matsukura, H. Ohno, "Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers", Journal of Crystal Growth, (in press), Nov. 22, 2013. |
*32 | H. W. Chang, S. Akita, F. Matsukura, and H. Ohno, "Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure", Applied Physics Letters, Vol. 103, pp. 142402 (1)-(4), Sep. 30, 2013. |
*33 | S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, and H. Ohno, "In-plane magnetic field dependence of electric field-induced magnetization switching", Applied Physics Letters, Vol. 103, 072408(1)-(4), Aug. 16, 2013. |
*34 | S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, "Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents", Nature Communications, Vol. 4, 2293(1)-(6), Aug. 15, 2013. |
*35 | I. Muneta, H. Terada, S. Ohya, and M. Tanaka, "Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism", Applied Physics Letters, Vol. 103, pp .032411 (1)-(4), Jul. 19, 2013. |
*36 | M. N. I. Khan, H. Naganuma, N. Inami, M. Oogane and Y. Ando, "Effect of Annealing Temperature on Structure and Magnetic Properties of - L10 FePd/CoFeB Bilayer", IEEE Transactions on Magnetics, Vol. 49, No. 7, pp. 4409-4412, Jul. 15, 2013. |
*37 | H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions with Perpendicular Easy Axis", IEEE Transactions on Magnetics, Vol. 49, No. 7, pp. 4437-4440, Jul. 15, 2013. |
*38 | S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, and H. Ohno, "CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition", Applied Physics Express, Vol. 6, pp. 073010 (1)-(3), Jul. 9, 2013. |
*39 | H. Kakizakai, K. Yamada, M. Kawaguchi, K. Shimamura, S. Fukami, N. Ishiwata, D. Chiba and T. Ono, "Direct observation of domain wall motion in Co/Pt wire under gate electric field", Japanese Journal of Applied Physics, Rapid Communication, Vol. 52, pp. 070206 (1)-(3), Jun. 20, 2013. |
*40 | L. Chen, F. Matsukura, and H. Ohno, "Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance", Nature Communications, Vol. 4, doi: No. 2055, 10.1038/ncomms 3055, Jun. 20, 2013. |
*41 | Y. Miura, M. Tsujikawa, M. Shirai, "A first-principles study on magnetocrystalline anisotropy at interfaces of Fe with non-magnetic metals", Journal of Applied Physics, Vol. 113, pp. 233908, (1)-(6), Jun. 20, 2013. |
*42 | S. Iihama, S. Mizukami, N. Inami, T. Hiratsuka, G. Kim, H. Naganuma, M. Oogane, T. Miyazaki, and Y. Ando, "Observation of Precessional Magnetization Dynamics in L10-FePt Thin Films with Different L10 Order Parameter Values", Japanses Journal of Applied Physics, Vol. 52, pp.073002(1)-(4), Jun. 18, 2013. |
*43 | K. Yamada, H. Kakizakai, K. Shimamura, M. Kawaguchi, S. Fukami, N. Ishiwata, D. Chiba and T. Ono, "Electric field modulation of magnetic anisotropy in MgO/Co/Pt structure", Applied Physics Express, Vol. 6, pp. 073004 (1)-(3), Jun. 18, 2013. |
*44 | J. Sinha, M. Hayashi, A. Kellock, S. Fukami, M. Yamanouchi, H. Sato, S. Ikeda, S. Mitani , S-H. Yang, S. S. P. Parkin and H. Ohno, "Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers", Applied Physics Letters, Vol. 102, pp. 242405 (1)-(4), Jun. 18, 2013. |
*45 | K.-J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, H. Kohno, G. Tatara, and T. Ono, "Two-barrier stability that allows low-power operation in current-induced domain-wall motion", Nature Communications, Vol. 4, doi: No. 2011, 10.1038/ncomms 3011, Jun. 17, 2013. |
*46 | T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H.Ohno and T. Endoh, "A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme", IEEE Journal of Solid-State Circuits, Vol. 48, No. 6, pp. 1511 (1)-(10), Jun. 6, 2013. |
*47 | S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai and H. Ohno, "Electrical endurance of Co/Ni wire for magnetic domain wall motion device", Applied Physics Letters, Vol. 102, pp. 222410 (1)-(4), Jun. 6, 2013. |
*48 | M. Yamanouchi, L. Chen, J. Y. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, "Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper", Applied Physics Letters, Vol. 102, pp. 212408 (1)-(4), May. 30, 2013. |
*49 | H. Saruyama, M. Oogane, Y. Kurimoto, H. Naganuma, and Y. Ando, "Fabrication of L10-ordered MnAl films for observation of tunnel magnetoresistance effect", Japanese Journal of Applied Physics, Vol. 52, pp. 063003 (1)-(4), May. 29, 2013. |
*50 | K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno, "Size Dependence of Magnetic Properties of Nanoscale CoFeB–MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance", Applied Physics Express, Vol. 6, pp. 063002 (1)-(3), May. 22, 2013. |
*51 | H. Tanigawa, T. Suzuki, S. Fukami, K. Suemitsu, N. Ohshima, and E. Kariyada, "Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy", Applied Physics Letters, Vol. 102, p.p. 152410 (1)-(4), Apr. 18, 2013. |
*52 | S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer", Journal of Applied Physics, Vol. 113, 17C721 (1)-(3), Apr. 3, 2013. |
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