1 | K. Mizunuma, H. Goto, S. Ikeda, H. Sato, M. Yamanouchi, R. Koizumi, F. Matsukura, and H.Ohno, "Dependence of Tunnel Magnetoresistance Properties on Sputtering Conditions and Stack Structures in CoFeB/MgO Based Magnetic Tunnel Junctions with Perpendicular Magnetic Anisotropy", The 5th International Symposium and The 4th Student Organizing International Mini-Conference on Information Electronics Systems, 2012/2/23. |
2 | H. Ohno, K. Mizunuma, S. Kanai, R. Koizumi, S. Ikeda, H. Sato, M. Yamanouchi, K. Miura, H. D. Gan, and F. Matsukura, "Recent progress in spintronics technology for nonvolatile VLSIs", The 5th International Symposium and The 4th Student Organizing International Mini-Conference on Information Electronics Systems, 2012/2/22. |
3 | Tetsuo Endoh (Moderator), Panel Discussion "Spintronics-based VLSIs, What remains to be done?", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/3. |
4 | H. Yamamoto, K. Ono, T. Morita, S. Ikeda,, H. Ohno, "Energy-assisted oxidation process of Mg layer for MgO-MTJs", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
5 | H. D. Gan, S. Ikeda, M. Yamanouchi, H. Sato, K. Miura, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, "Annealing temperature dependence of tunnel magnetoresistance in MgO magnetic tunnel junctions with thin CoFeB electrodes", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
6 | R. Koizumi, S. Ikeda, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. D. Gan, F. Matsukura, and H. Ohno, "B concentration dependence of magnetic anisotropy in MgO/CoFeB/Ta stack structure", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
7 | N. Inami, H. Naganuma, M. Oogane, Y. Ando, S. Ikeda, H. Ohno, "Spin Torque Diode Effect of Perpendicularly Magnetized CoFeB/MgO/CoFeB Magnetic Tunnel Junctions", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
8 | M. Nishimura, M. Oogane, H. Naganuma, N. Inami, and Y. Ando, "Spin-transfer Switching Characteristics in Magnetic Tunnel Junctions with Synthetic Free Layers", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
9 | H. Naganuma, K. Mukaiyama, M. Oogane, and Y. Ando, "Crystal symmetry change from rhombohedral and tetragonal by substrate temperature for BiFeO3 epitaxial films", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2 |
10 | H. Naganuma, G. Kim, M. Oogane, and Y. Ando, "Magnetotransport properties in perpendicular magnetized L1o-CoPt/CoFeB and L1o-FePd/CoFeB magnetic tunnel junctions", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
11 | S. Matsunaga, A. Katsumata, M. Natsui, and T. Hanyu, "7T-2MTJ-Based High-Speed Nonvolatile Fully Parallel TCAM", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
12 | D. Suzuki and T. Hanyu, "Design of a Compact MTJ/MOS-Hybrid Logic Element for a Nonvolatile Field-Programmable Gate Array", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
13 | S. Togashi, T. Ohsawa, and T. Endoh, "Nonvolatile Low Power 16-bit/32-bit Binary Counter with MTJ and its Scalability", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
14 | Y. Miura, M. Tsujikawa, K. Abe, and M. Shirai "Tailoring nonmagnetic-metals/Fe interfaces with perpendicular magnetic anisotropy in first-principles calculations", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
15 | M. Tsujikawa, Y. Miura, and M. Shirai "Interface magnetic anisotropy between transition metal nitride (carbide) and Fe(001) ", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
16 | D. Mori, M. Tsujikawa, Y. Miura, K. Abe, and M. Shirai "Perpendicular magnetic anisotropy of Co2FeAl/MgO interfaces", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
17 | H. Koike, T. Ohsawa, and T. Endoh, "A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MTJ", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
18 | S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, and T. Hanyu, "Implementation of a Perpendicular MTJ-Based Read-Disturb-Tolerant 2T-2R Nonvolatile TCAM Based on a Reversed Current Reading Scheme", The 17th Asia and South Pacific Design Automation Conference (ASP-DAC), University LSI Design Contest, 2012/2/2. |
19 | Le Duc Anh, Pham Nam Hai, and Masaaki Tanaka, "Properties of n-type ferromagnetic semiconductor (In,Fe)As: Fe concentration and thickness dependence", 2nd International Workshop on Magnetic Materials and Nanostructures, 2012/1/11. |
20 | T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno, "A 600MHz MTJ-Based Nonvolatile Latch Making Use of Incubation Time in MTJ Switching", 2011 IEEE International Electron Devices Meeting (IEDM 2011), 2011/12/5. |
21 | K. Kinoshita, T. Yamamoto, H. Honjo, N. Kasai, S. Ikeda, H. Ohno, "Damage recovery by reductive chemistry after methanol based plasma etch to fabricate magnetic tunnel junction", 33rd International Symposium on Dry Process (DPS2011), 2011/11/10. |
22 | L. D. Anh, P. N. Hai and M. Tanaka, "Intrinsic ferromagnetism in (In,Fe)As and its dependence on Fe concentration", 56th Annual Magnetism and Magnetic Materials (MMM) Conference, 2011/11/3. |
23 | P. N. Hai, L. D. Anh and M. Tanaka, "(In,Fe)As: A new Fe-based n-type electron-induced ferromagnetic semiconductor", 56th Annual Magnetism and Magnetic Materials (MMM) Conference, 2011/11/3. |
24 | M. Hayashi, S. Fukami, T. Suzuki, M. Yamanouchi, J. Sinha, N. Ishiwata, Y. Nakatani, S. Mitani and H. Ohno, "Spin orbit field assisted current driven domain wall motion in perpendicularly magnetized ultrathin CoFeB/MgO nanowires", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/3. |
25 | J. Sinha, M. Hayashi, M. Drapeko, Y. K. Takahashi, T. Taniguchi, S. Mitani and K. Hono, "Reduced nonlinear phase noise and large amplitude microwave emission from Co2Fe(Ga0.5Ge0.5) Heusler alloy based pseudo spin valve nanopillars", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/3. |
26 | S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a 270ps-Access 7T-2MTJ-Cell Nonvolatile Ternary Content-Addressable Memory", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/3. |
27 | D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "50%-Transistor-Less Standby-Power-Free 6-input LUT Circuit Using Redundant MTJ-Based Nonvolatile Logic-in-Memory Architecture", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/3. |
28 | M. Yamanouchi, A. Jander, P. Dhagat, S. Ikeda, F. Matsukura, and H. Ohno, "Domain patterns in demagnetized CoFeB/MgO structures with perpendicular anisotropy", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/2. |
29 | H. D. Gan, S. Ikeda, M. Yamanouchi, H. Sato, K. Miura, K. Mizunuma, R. Koizumi, F. Matsukura and H. Ohno, "Annealing stability of perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions with various junction sizes", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/2. |
30 | M.I. Khan, N. Inami, H. Naganuma, M. Oogane and Y. Ando, "Promotion of L10 ordering of FePd films with amorphous CoFeB thin interlayer", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/1. |
31 | H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N.Ishiwata, S.Miura, N. Sakimura, T.Sugibayashi, N. Kasai, and H. Ohno, "Domain Wall Motion Cell with Perpendicular Anisotropy Wire and In-plane MTJ", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/1. |
32 | H. Honjo, S. Fukami, R. Nebashi, N.Ishiwata, S.Miura, N. Sakimura, T.Sugibayashi, N. Kasai, and H. Ohno, "The MTJ with Fe/NiFeB Free layer for Magnetic Logic", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/1. |
33 | K. Miura, R. Sugano, M. Ichimura, J. Hayakawa, S. Ikeda, H. Ohno, and S. Maekawa, "Decrease in intrinsic critical current density under magnetic field along hard in-plane axis of free layer in magnetic tunnel junctions with in-plane anisotropy", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/1. |
34 | M. Hosoda, M. Oogane, M. Kubota, T. Kubota, H. Saruyama, S. Iihama, S. Mizukami, H. Naganuma and Y. Ando "Fabrication of L10-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions", The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/11/1. |
35 | M. Nishimura, M. Oogane, H. Naganuma, N. Inami, T. Morita, and Y. Ando "Dependence of spin-transfer switching characteristics in MTJs with synthetic free layers on the coupling strength″, The 56th Annual Conference on Magnetism & Magnetic Materials, 2011/10/31. |
36 | F. Iga, Y. Yoshida, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/30. |
37 | M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh, "Role of Synthetic Ferrimagnets in MTJs from Wave Packet Dynamics", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/30. |
38 | D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "A Compact Nonvolatile Logic Element Using an MTJ/MOS-Hybrid Structure", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/30. |
39 | M. Tsujikawa, Y. Miura, M. Shirai, and T. Oda, "Electric-field modulation of magnetic anisotropy at surfaces and interfaces", International Focus Workshop on Quantum Simulations and Design, 2011/9/29. |
40 | R. Nakazawa, H. Kino, K. Kiyoyama, M. Koyanagi, T. Tanaka, "Write Speed Evaluation of Reconfigurable Spin Logic Block with SPRAM for 3D-Stacked Reconfigurable Spin Processor", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/29. |
41 | S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "High-Speed-Search Nonvolatile TCAM Using MTJ Devices", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/29. |
42 | S. Togashi, T. Ohsawa, T. Endoh, "Nonvolatile Low Power 16-bit/32-bit MTJ Based Binary Counter and its Scaling", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/29. |
43 | T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT)", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/28. |
44 | F. Iga, Y. Suzuki, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Novel 2step Writing Method for STT-RAM to improve Switching Probability and Write Speed", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/28. |
45 | H. Koike, T. Endoh, "A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MTJ", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/28. |
46 | D. Mori, M. Tsujikawa, Y. Miura, K. Abe, and M. Shirai, "Ab initio study on magnetic anisotropy at Co2FeAl/MgO and Fe/MgO interfaces", Annual Meeting of Advanced Spintronic Materials and Transport Phenomena JST-DFG Research Unit, 2011/8/22. |
47 | H. D. Gan, S. Ikeda, M. Yamanouchi, H. Sato, K. Miura, K. Mizunuma, R. Koizumi, F. Matsukura and H. Ohno, "Annealing stability of perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/5. |
48 | H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, H.D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, "Scalability of critical current in perpendicular anisotropy CoFeB/MgO magnetic tunnel junction", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/5. |
49 | S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno, "Mgnetic anisotropy direction switching in Ta/CoFeB/MgO by electric fields", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/5. |
50 | Y. Ban, R. Akiyama, S. Ohya, and M. Tanaka, "Photo-induced anomalous Hall effect in the group-IV based ferromagnetic semiconductor Ge1-xFex", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/3. |
51 | I. Muneta, S. Ohya, and M. Tanaka, "Tunneling magnetoresistance in GaMnAs and GaAs double-quantum-well heterostructures", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/3. |
52 | R. Akiyama, S. Ohya, P. N. Hai, and Masaaki Tanaka, "Magnetoresistance induced by spin-dependent inelastic cotunneling in a ferromagnetic MnAs nanoparticle with non-magnetic electrodes", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/3. |
53 | L. D. Anh, P. N. Hai, and M. Tanaka, "Correlation between magnetic circular dichroism, anomalous Hall effect and magnetization in (In,Fe)As", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/3. |
54 | P. N. Hai, L. D. Anh, and M. Tanaka, "A new Fe-based n-type ferromagnetic semiconductor (In,Fe)As", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 8/3. |
55 | S. Ohya, Y. Xin, I. Muneta, K. Takata, and M. Tanaka, "Valence-band structure of (III,Mn)As ferromagnetic semiconductors", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/3. |
56 | D. Mori, M. Tsujikawa, Y. Miura, K. Abe, and M. Shirai, "A first-principles study on magnetic anisotropy of Fe/MgO(001) interface", 5th International Workshop on Spin Currents, 2011/7/27. |
57 | M. Tsujikawa, Y. Miura, M. Shirai, and T. Oda, "Electric field modulation of magnetic anisotropy in MgO/Fe-Pt thin films", 5th International Workshop on Spin Currents, 2011/7/27. |
58 | L.D. Anh, P.N. Hai, and M. Tanaka, "A new Fe-based n-type ferromagnetic semiconductor", 5th International Workshop on Spin Currents 2011, 2011/7/26. |
59 | I. Muneta, S. Ohya, and M. Tanaka, "Spin-dependent tunneling transport in GaMnAs and GaAs double-quantum-well heterostructures", 5th International Workshop on Spin Currents 2011, 2011/7/26. |
60 | S. Togashi, T. Ohsawa, T. Endoh, "Low Power Nonvolatile Counter Circuit with Fine-Grained Power Gating", 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2011/6/30. |
61 | F. Iga, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Study of the Resistive Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junction Integrated on Back-End Line of CMOS Circuit", 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2011/6/30. |
62 | Y. Yoshida, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, "Time-Dependent Switching Characteristics of Magnetic Tunnel Junction (MTJ)", 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2011/6/29. |
63 | M. Arikawa, Y. Hatsugai, K. Shiraishi, T. Endoh, "Electron Dynamics in the Ferromagnetic Tunnel Junction", 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2011/6/29. |
64 | S.Ohya, K.Takata, Y.Xin, and M.Tanaka, "Universal valence-band picture of the ferromagnetic semiconductor GaMnAs obtained by the resonant tunneling spectroscopy", 53rd Electronic Materials Conference 2011 (EMC 2011), 2011/6/22-24. |
65 | R. Nebashi, N. Sakimura, Y. Tsuji, S. Fukami, H. Honjo, S. Saito, S. Miura, N. Ishiwata, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno and T. Sugibayashi, "A Content Addressable Memory Using Magnetic Domain Wall Motion Cells", 2011 Symposium on VLSI Circuits, 2011/6/17. |
66 | S. Matsunaga, A. Katsumata, M. Natsui, S. Fukami, T. Endoh, H. Ohno, T. Hanyu, "Fully Parallel 6T-2MTJ Nonvolatile TCAM with Single-Transistor-Based Self Match-Line Discharge Control", 2011 Symposium on VLSI Circuits, 2011/6/17. |
67 | K. Miura, S. Ikeda, M. Yamanouchi, H. Yamamoto, K. Mizunuma, H. D. Gan, J. Hayakawa, R. Koizumi, F. Matsukura, and H. Ohno, "CoFeB/MgO based perpendicular magnetic tunnel junctions with stepped structure for symmetrizing different retention times of “0” and “1” information", 2011 Symposia on VLSI Technology, 2011/6/16. |
68 | S. Sato, R. Nakane, S. Kokutani, and M. Tanaka, "Influence of anisotropic magnetoresistance on nonlocal signals in multi-terminal lateral devices with a Si channel and Fe electrodes", Three-University-Symposium on Nano-manufacturing and Nanotechnology, Nanotechnology for Advanced Electronics, Photonics, and Sensing, 2011/6/6-7. |
69 | S. Matsunaga, A. Katsumata, M. Natsui, and T. Hanyu, "Design of a Low-Energy Nonvolatile Fully-Parallel Ternary CAM Using a Two-Level Segmented Match-Line Scheme", 41st IEEE International Symposium on Multiple-Valued Logic, 2011/5/23. |
70 | S. Fukami, T. Suzuki, Y. Nakatani, M.Yamanouchi, S. Ikeda, N. Kasai and H. Ohno, "Domain wall motion induced by electric current in CoFeB/MgO wire with perpendicular magnetic anisotropy", IEEE International Magnetics Conference, 2011/4/29. |
71 | R. Koizumi, H. Sato, M. Yamanouchi, S. Ikeda, K. Mizunuma, K. Miura, H. Gan, F. Matsukura, and H. Ohno, "Post-annealing effect on perpendicular magnetic anisotropy in CoFeB/MgO structure", IEEE International Magnetics Conference, 2011/4/29. |
72 | H. Yamamoto, K. Ono, T. Morita, S. Ikeda,, H. Ohno, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with natural oxidation process", IEEE International Magnetics Conference, 2011/4/28. |
73 | K. Mizunuma, H. Goto, S. Ikeda, H. Sato, M.Yamanouchi, R. Koizumi, K. Miura, H. Gan, F. Matsukura and H. Ohno, "Dependence of tunnel magnetoresistance in CoFeB-MgO based perpendicular anisotropy magnetic tunnel junctions on sputtering conditions and stack structures", IEEE International Magnetics Conference, 2011/4/28. |
74 | H. Sato, M.Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, K. Mizunuma, H. Gan, F. Matsukura and H. Ohno, "Size Dependence of CoFeB/MgO Perpendicular Anisotropy Magnetic Tunnel Junctions on Critical Current and Thermal Stability", IEEE International Magnetics Conference, 2011/4/27. |
75 | H. Koike and T. Endoh, "A New Sensing Scheme with High Signal Margin Suitable for Spin-Transfer Torque RAM", International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2011/4/26. |
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東北大学 省エネルギー・スピントロニクス集積化システムセンター