*Peer Reviewed Paper

*1 | M.Arikawa, Y.Hatsugai, T.Endoh, K.Shiraishi, “Wave packet dynamics in the spin torque transfer”, Journal of the Physical Society of Japan, Vol.81, pp. 044706 (1)-(4), March 2012. |

*2 | R. Akiyama, S. Ohya, P. N. Hai, and M. Tanaka, “Magnetoresistance Enhanced by Inelastic Cotunneling in a Ferromagnetic MnAs Nanoparticle Sandwiched by Nonmagnetic Electrodes”, Journal of Applied Physics 111, pp. 063716 (1)-(5), March 2012. |

*3 | S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, “Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory”, Journal of Applied Physics. Vol. 111, pp. 07E336 (1)-(3), March 2012. |

*4 | H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, “Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits”, Journal of Applied Physics, Vol. 111, pp. 07C709 (1)-(3), March 2012. |

*5 | M. N. I. Khan, N. Inami, H. Naganuma, Y. Ohdaira, M. Oogane and Y. Ando, “Promotion of L10 ordering of FePd films with amorphous CoFeB thin interlayer”, Journal of Applied Physics, Vol. 111, 07C112 (1)-(3), February 2012. |

*6 | M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, and H. Ohno, “Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions”, Journal of Applied Physics, Vol.111, pp. 043913 (1)-(3), February 2012. |

7 | H. Ohno, K. Mizunuma, S. Kanai, R. Koizumi, S. Ikeda, H. Sato, M. Yamanouchi, K. Miura, H. D. Gan, and F .Matsukura, “Recent progress in spintronics technology for nonvolatile VLSIs”, Proceedings of The 5th International Symposium and The 4th Student Organizing International Mini-Conference on Information Electronics Systems, pp.76-80, February 2012. |

8 | K. Mizunuma, H. Goto, S. Ikeda, H. Sato, M. Yamanouchi, R. Koizumi, F. Matsukura, and H. Ohno, “Dependence of tunnel magnetoresistance properties on sputtering conditions and stack structures in CoFeB/MgO based magnetic tunnel junctions with perpendicular magnetic anisotropy”, Proceedings of The 5th International Symposium and The 4th Student Organizing International Mini-Conference on Information Electronics Systems, pp.186-187, February 2012. |

9 | S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno, “Magnetic anistropy modulation in Ta/CoFeB/MgO by electric fields: annealing temperature and composition dependence”, Proceedings of The 5th International Symposium and The 4th Student Organizing International Mini-Conference on Information Electronics Systems, pp.188-189, February 2012. |

*10 | D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, “Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions”, Journal of Applied Physics, Vol. 111, pp. 07E318 (1)-(3), February 2012. |

*11 | M. Yamanouchi, A. Jander, P. Dhagat, S. Ikeda, F. Matsukura and H. Ohno, “Domain Structure in CoFeB Thin Films with Perpendicular Magnetic Anisotropy”, IEEE Magnetics Letters, Vol. 2, pp. 3000304(1)-(4), February 2012. |

*12 | M Nishimura, M Oogane, H Naganuma, N Inami, T Morita, and Y Ando, “Dependence of spin-transfer switching characteristics in magnetic tunnel junctions with synthetic free layers on coupling strength”, Journal of Applied Physics. Vol 111 pp. 07C905 (1)-(3), February 2012. |

*13 | T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, “High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction”, Japanese Journal of Applied Physics, Vol. 51, pp. 02BD01 (1)-(6), February 2012. |

*14 | F. Iga, Y. Yoshida, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, “Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme”, Japanese Journal of Applied Physics, Vol. 51, pp. 02BM02 (1)-(5), February 2012. |

*15 | S. Togashi, T. Ohsawa, T. Endoh, “Nonvolatile Low Power 16-Bit/32-Bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling”, Japanese Journal of Applied Physics, Vol. 51, pp. 02BE07 (1)-(5), February 2012. |

*16 | S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, “Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory”, Japanese Journal of Applied Physics, Vol. 51, pp. 02BM06 (1)-(5), February 2012. |

*17 | M.Arikawa, M.Muraguchi, Y.Hatsugai, K.Shiraishi, and T.Endoh, “Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics”, Japanese Journal of Applied Physics, Vol. 51, pp. 02BM03 (1)-(4), February 2012. |

*18 | M Hosoda, M Oogane, M Kubota, T Kubota, H Saruyama, S Iihama, H Naganuma, and Y Ando, “Fabrication of L10-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions”, Journal of Applied Physics, Vol. 111 pp. 07A324 (1)-(3), February 2012. |

*19 | H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, and H. Ohno, “Domain Wall Motion Cell with Perpendicular Anisotropy Wire and In-plane MTJ”, Journal of Applied Physics, Vol. 111, pp. 07C903 (1)-(3), February 2012. |

*20 | H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, and H. Ohno, “Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions”, Applied Physics Letters, Vol. 99 pp.252507 (1)-(3), December 2011. |

*21 | M. Hayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, S. Mitani and H. Ohno, “Domain wall dynamics driven by spin transfer torque and the spin orbit field”, Journal of Physics: Condensed Matter, Vol. 24, pp. 024221 (1)-(8), December 2012. |

*22 | K. Miura, R. Sugano, M. Ichimura, J. Hayakawa, S. Ikeda, H. Ohno, and S. Maekawa, “Reduction of Intrinsic Critical Current Density under Magnetic Field along Hard Axis of Free Layer in Magnetic Tunnel Junction”, Physical Review B, Vol. 84, pp. 174434 (1)-(7), November 2011. |

*23 | T. Kawahara, K. Ito, R. Takemura, H.Ohno, “Spin-transfer torque RAM technology: Review and prospect”, Microelectronics Reliability, Vol.52, pp. 613-627, November 2012. |

*24 | S. Yada, P. N. Hai, S. Sugahara, and M.anaka, "Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates", Journal of Applied Physics 110, pp.073903 (1)-(8) October, 2011. |

*25 | J. Sinha, M. Hayashi, Y. K. Takahashi, T. Taniguchi, M. Drapeko, S. Mitani and K. Hono, “Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe (Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars”, Applied Physics Letters. Vol. 99, No. 16, pp. 162508 (1)-(3), October 2011. |

*26 | T. Endoh, “Restructuring of Memory Layer in Electrical System and Its Novel Evolution with Nonvolatile Logic”, ECS Transactions, Vol. 41, Issue 7: ULSI Process Integration 7, Chapter 2: Memory Technologies, pp. 59-71, October 2011. |

*27 | W. X. Wang, Y. Yang, H. Naganuma, Y. Ando, R. C. Yu, and X. F. Han, “The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction”, Applied Physics Letters, Vol. 99, pp. 012502(1)-(3), July 2011. |

*28 | H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, “Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions”, Applied Physics Letters, Vol.99, pp. 042501(1)-(3), July 2011. |

*29 | S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, and T. Hanyu, “Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme”, Japanese Journal of Applied Physics, Vol. 50, pp. 063004(1)-(7), June 2011. |

*30 | Y. Miura, K. Abe, and M. Shirai, “Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions: A first-principles study”, Physical Review B, Vol. 83, pp. 214411(1)-(6), June 2011. |

*31 | H. D. Gan, S. Ikeda, M. Yamanouchi, K. Miura, K. Mizunuma, J. Hayakawa, F. Matsukura, and H. Ohno, “Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures”, IEEE Transactions on Magnetics, Vol. 47, pp. 1567-1570, June 2011. |

*32 | M. Kamiyanagi, T. Imamoto, T. Sasaki, H. Na, and T. Endoh “Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation”, IEICE Transactions on Electronics, Vol. E94-C, No.5, pp. 760-766, May 2011. |

*33 | T. Endoh, M. Kamiyanagi, M. Muraguchi, T. Imamoto, and T. Sasaki, “The Impact of Current Controlled-MOS Current Mode Logic / Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation”, IEICE Transactions on Electronics, Vol. E94-C, No.5, pp. 743-750, May 2011. |

*34 | T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo-Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, and H. Ohno, “Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions”, Applied Physics Letters, Vol. 98, pp. 162502(1)-(3), April 2011. |

*35 | P. N. Hai, S. Yada and M. Tanaka, "Phase decomposition diagram of magnetic alloy semiconductor", Journal of Applied Physics, 109, pp. 073919 (1)-(9) April, 2011. |

*36 | T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno, “Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire”, Applied Physics Letters, Vol. 98, pp. 142502 (1)-(3), April 2011. |

*37 | S. Ohya, K. Takata and M. Tanaka, “Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs”， Nature Physics Vol.7, pp. 342-347, April 2011. |

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