1 | M. Shinozaki, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Homodyne-detected ferromagnetic resonance in nanoscale magnetic tunnel junction under perpendicular magnetic fields", Regensburg-Tohoku Workshop on Solid-State Physics and Spintronics, yamagata, Japan, March 28, 2017. |
2 | F. Matsukura, "Field and current-induced magnetization reversal in elliptic CoFeB/MgO magnetic tunnel junctions", Regensburg - Tohoku Workshop on Solid-State Physics and Spintronics, yamagata, Japan, March 28, 2017. |
3 | M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Junction size dependence of damping constants of CoFeB in magnetic tunnel junctions", International School on Spintronics and Spin-Orbitronics, Fukuoka Recent Hotel, Japan, December 16, 2016. |
4 | J. Igarashi, E. C. I. Enobio, J. Llandro, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Magnetic field angle dependence of switching field in perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions at various temperatures", International School on Spintronics and Spin-Orbitronics, Fukuoka Recent Hotel, Japan, December 16, 2016. |
5 | M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Homodyne-detected ferromagnetic resonance spectra of CoFeB with perpendicular easy axis under perpendicular magnetic fields", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
6 | S. Ishikawa, Eli C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Current induced magnetization switching of magnetic tunnel junctions with Co-based recording layers", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
7 | M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura and H. Ohno, "Interfacial anisotropy and Gilbert damping in MgO/Fe/Fe-V/Fe/MgO structure", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
8 | A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno, "Spin-orbit torque induced switching of antiferromagnet/ferromagnet dots with various sizes", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
9 | C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno, "Spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO, - Effect of sputtering condition of W", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
10 | K. Watanabe, S. Fukmai, H. Sato, F. Matsukura, and H. Ohno, "Effect of Buffer Layer Material and its Crystal Structure on Magnetic Properties of CoFeB/MgO Stacks", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
11 | S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno, "Universality classes for domain wall creep motion in magnetic metal Ta/CoFeB/MgO", 14th RIEC International Workshop on SPINTRONICS, Tohoku University, Sendai, Japan, November 18, 2016. |
12 | D. Suzuki and T. Hanyu, "A Self-Terminated One-Phase Write Driver for Complementary-MTJ Based Memory Cells", 61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, LA, USA, November 3, 2016. |
13 | Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh, "A 600-µW ultra-low-power associative processor based on MTJ nonvolatile memories with autonomic intelligent power-gating scheme", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
14 | M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu, "Design of an MTJ-based nonvolatile LSI for energy-efficient microcontroller unit", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
15 | D. Suzuki and T. Hanyu, "Design of an MTJ-based nonvolatile flip-flop with high-sensitive self-terminated writing for a nonvolatile microcontroller unit", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
16 | H. Ohno, T. Endoh, T. Hanyu, and S. Ikeda, "Overview of spintronic integrated circuit project", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
17 | H. Sato, S. Fukami, S. Ikeda, and H. Ohno, "Two- and three-terminal devices for spintronics based integrated circuits", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, September 30, 2016. |
18 | M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H.Ohno, "Magnetic properties of MgO/FeV/MgO and MgO/Fe/FeV/Fe/MgO structures for spintronics integrated circuits", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
19 | C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO dots", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
20 | D. Suzuki and T. Hanyu, "A Self-Terminated Energy-Efficient Nonvolatile Flip-Flop Using 3-terminal Magnetic Tunnel Junction Device", 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 28, 2016. |
21 | J. Igarashi, E. C. I. Enobio, J. Llandro, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Magnetic Field Angle Dependence of Switching Field in CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Easy Axis at Low Temperature", 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 28, 2016. |
22 | M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu, "Highly Reliable MTJ-Based Nonvolatile Logic-in-Memory LSI with Dynamic Write Error Masking Scheme", 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 27, 2016. |
23 | Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh, "A Compact and Ultra-Low-Power STT-MRAM-Based Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching", 2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 27, 2016. |
24 | K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Dependence of Magnetic Properties of CoFeB-MgO Stacks on the Buffer Layer Nature", 2016 Tohoku University and University of York Joint Seminar: Prospect of Future Spintronics -from physics to devices-, Tohoku University, Sendai, Japan, August 29, 2016. |
25 | M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Damping constant of nanoscale CoFeB determined from magnetic tunnel junction with orthogonal magnetization directions", 2016 Tohoku University and University of York Joint Seminar: Prospect of Future Spintronics -from physics to devices-, Tohoku University, Sendai, Japan, August 29, 2016. |
26 | C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno, "Sputtering condition dependence of spin-orbit torque induced magnetization switching in W/CoFeB/MgO", 8th Joint European Magnetic Symposia (JEMS2016), Glasgow, UK, August 22, 2016. |
27 | A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno, "Field-free switching of antiferromagnet/ferromagnet dots by spin-orbit torque", 9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 9, 2016. |
28 | M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "High interfacial anisotropy and low Gilbert damping in MgO/Fe/Fe-V/Fe/MgO structure", 9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 8, 2016. |
29 | M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Damping constant of free layer in nanoscale magnetic tunnel junction through domain structures", 9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 8, 2016. |
30 | Y. Ma and T. Endoh, "Effect of MTJ Resistance Fluctuations on Synapse Stability of MTJ-Based Nonvolatile Neuron Circuit for High-Speed Object Recognition", 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), Hakodate, Japan, July 5, 2016. |
31 | M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Evaluation of damping constant in a nanoscale magnetic tunnel junction by homodyne-detected ferromagnetic resonance", 3rd Workshop of the Core-to-Core Project Tohoku-York-Kaiserslautern New concepts for future spintronic devices, Kaiserslautern, Germany, June 22, 2016. |
32 | S. Fukami, T. Anekawa, A. Ohkawara, C. Zhang, and H. Ohno, "A sub-ns three-terminal spin-orbit torque induced switching device", 2016 Symposium on VLSI Technology, Hawaii, USA, June 14, 2016. |
Center for Spintronics Integrated Systems, Tohoku University
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Center for Spintronics Integrated Systems