1 | M. Tanaka, P.N. Hai, and S. Ohya, "Recent Progress in Ferromagnetic Semiconductors", 6th Indo-Japan Seminar 'Physics and Design of Multi-Functional Correlated Materials', Tokyo, Japan, March 23, 2014. |
2 | T. Hanyu, "Challenge of MTJ/MOS-Hybrid logic LSI based on nonvolatile logic-in-memory architecture for dark silicon applications", International Meeting on Spintronics for Intergrated Circuits Applications and Beyond, Tokyo International Forum, Tokyo, March 13, 2014. |
3 | T. Endoh, "Spintronics-based Nonvolatile Computing Systems", International Meeting on Spintronics for Intergrated Circuits Applications and Beyond, Tokyo International Forum, Tokyo, March 13, 2014. |
4 | H. Ohno, "Spintronics: Materials through devices to Integrated Circuits", International Meeting on Spintronics for Intergrated Circuits Applications and Beyond, Tokyo International Forum, Tokyo, March 13, 2014. |
5 | H. Ohno, "Nanoscale magnetic tunnel junction", American Physical Society, March Meeting, Colorado Convention Center, Denver, March 6, 2014. |
6 | T. Endoh, "STT-MRAM and NV-Logic for Low Power Systems", SEMICON Korea, Seoul, Korea, February 12, 2014. |
7 | T. Ono, "Current-induced magnetic domain wall motion in perpendicularly magnetized Co/Ni nanowires: Spin-transfer torque and spin Hall torque", 14th REIMEI workshop on spin currents and related phenomena, Grenoble, France, February 11, 2014. |
8 | S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, F. Matsukura, and Hideo Ohno, "Advances in spintronics devices for microelectronics - from spin-transfer torque to spin-orbit torque", 19th Asia and South Pacific Design Automation Conference (ASP-DAC 2014), Suntec, Singapore, January 23, 2014. |
9 | T. Hanyu, "Challenge of MTJ-Based Nonvolatile Logic-in-Memory Architecture Towards Dark-Silicon Logic LSI", Workshop on Network on Chip between HKUST and CREST-DVLSI, Lo Ka Chung Building, HKUST, Hong Kong, China, December 14, 2013. |
10 | T. Ono, "Current-induced domain wall motion: spin transfer torque v.s. spin Hall torque", The 8th International Conference on Advanced Materials and Devices, Jeju, Korea, December 11, 2013. |
11 | T. Endoh, "Is there life beyond conventional CMOS? (Evening Panel)", 2013 IEEE International Electron Devices Meeting (IEDM), Washington DC, US, December 10, 2013. |
12 | T. Endoh, "STT-MRAM and its NV-Logic applications for Ultimate Power Management", SEMATECH-imec Workshop, Washington DC, US, December 8, 2013. |
13 | T. Ono, "Current-induced domain wall motion: Spin transfer torque v.s. spin Hall torque", International Japanese-French Workshop on Spintronics, Orsey, France, November 28, 2013. |
14 | S. Fukami and H. Ohno, "Three-terminal magnetic domain wall motion device for spintronics VLSIs", International Japanese-French Workshop on Spintronics, Orsey, France, November 28, 2013. |
15 | T. Ono, "Current-induced domain wall motion in perpendicularly magnetized Co/Ni multilayered wires", Asia-Pacific Data Storage Conference 2013, Hualien, Taiwan, November 21, 2013. |
16 | H. Ohno, "CoFeB-MgO Perpendicular Magnetic Tunnel Junction: Status & Prospects", Samsung 2nd STT-MRAM Global Innovation Forum 2013, Tokyo, Japan, November 20, 2013. |
17 | T. Ono, "Mechanisms of current-induced domain wall motion", Nano-scale dynamics in magnetism workshop, KRISS, Daejeon, Korea, November 16, 2013. |
18 | M. Hayashi, "Spin orbit torques in Ta|CoFeB|MgO magnetic heterostructures", 58th Annual Magnetism and Magnetic Materials (MMM) Conference, Denver, Colorado, U.S.A., November 7, 2013. |
19 | T. Endoh, "STT-MRAM and NV-Logic for Low Power Systems", International Microprocesses and Nanotechnology Conference (MNC), Sapporo, Japan, November 6, 2013. |
20 | H. Ohno, "Material Status and Outlook of STT-Based Memory Technology", 58th Annual Magnetism and Magnetic Materials (MMM) Conference, Denver, Colorado, U.S.A., November 5, 2013. |
21 | M. Hayashi, "Magnetization switching using spin orbit torques in CoFeB|MgO magnetic heterostructures", 224th Electrochemical society meeting, San Francisco, CA, October 30, 2013. |
22 | S. Ohya and M. , "Semiconductor Spintronics Based on Ferromagnetic-Semiconductor Quantum Heterostructures", Energy, Materials and Nanotechnology (EMN) Conference, Chengdu, China, October 23, 2013. |
23 | H. Naganuma, "Bi based multiferroic thin films", Energy material nanotechnology, Chengdu, China, October 22, 2013. |
24 | T. Ono, "Current-induced domain wall motion and its application", NSFC-JSPS seminar on magnetic surface and films with novel characterization method, Fudan Univeristy, October 21, 2013. |
25 | S. Fukami, H. Ohno, "Current-induced magnetic domain wall motion in Co/Ni wire and its application to nonvolatile memory devices", 150 years diplomatic relation Japan-Switzerland, Swiss-Japanese Nanoscience Workshop, Materials Phenomena at Small Scale, NIMS, Tsukuba, October 10, 2013. |
26 | H. Ohno, "Spintronics Devices for Nonvolatile CMOS VLSIs", 150 years diplomatic relation Japan-Switzerland, Swiss-Japanese Nanoscience Workshop, Materials Phenomena at Small Scale, NIMS, Tsukuba, October 10, 2013. |
27 | M. Tanaka, Pham Nam Hai, Le Duc Anh, Daisuke Sasaki, "Recent progress of ferromagnetic semiconductors N-type electron-induced ferromagnetic semiconductor (In, Fe) As", International Conference and Exhibition on Lasers, Optics & Photonics (Optics 2013), San Antonio, USA, October 7, 2013. |
28 | T. Ono, "Current-induced domain wall motion:", Kavli Institute for Theoretical Physics: Concepts in Spintronics, Santa Barbara, CA, October 1, 2013. |
29 | M. Hayashi, "Spin orbit torques and current induced domain wall motion in magnetic heterostructures", Kavli Institute for Theoretical Physics: Concepts in Spintronics, Santa Barbara, CA, September 30, 2013. |
30 | T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "Strategy of STT-MRAM Cell Design and Its Power Gating Technique for Low-Voltage and Low-Power Cache Memories", 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, September 27, 2013. |
31 | T. Endoh, "Impact of 3D structured Memory and Spintronics based NV-Memory for High Performance & Low Power Systems", 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, September 24, 2013. |
32 | P. N. Hai and M. Tanaka, "Spin-dependent transport phenomena in III-V semiconductor heterostructures with ferromagnetic MnAs nano-scale particles", Vietnamese-Japanese Students' Scientific Exchange Meeting (VJSE), Osaka, Japan, September 23, 2013. |
33 | T. Ono, "Current-induced domain wall motion: Adiabatic spin transfer torque v.s. Spin Hall torque", EASTMAG 2013 (Vth Euro-Asian Symposium "Trends in MAGnetism"), Vladivostok, Russia, September 16, 2013. |
34 | M. Hayashi, "Current induced spin orbit torques in CoFeB|MgO magnetic heterostructures", Donostia International Conference on Nanoscaled Magnetism and Applications, San Sebastian, Spain, September 10, 2013. |
35 | H. Ohno, "Magnetic Tunnel Junction Technology: Materials and Performance", International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey, September 2, 2013. |
36 | H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura,and H. Ohno, "Switching current and thermal stability of perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions", International Conference on Applied Mathematics, Modeling and Computational Science AMMCS-2013, Ontario, Canada, August 30, 2013. |
37 | T. Endoh, "Spintronics Based NV-Memory/Logic for Low Power Systems", 13th Non-Volatile Memory Technology Symposium (NVMTS 2013), University of Minnesota, Minneapolis, USA, August 14, 2013. |
38 | H. Hanyu, "Towards a Nonvolatile VLSI Processor Using MTJ/MOS-Hybrid Logic-in-Memory Architecture", 13th Non-Volatile Memory Technology Symposium (NVMTS 2013), University of Minnesota, Minneapolis, USA, August 13, 2013. |
39 | H. Ohno, "Introduction to spintronics for integrated circuit applications", 7th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH VII), Chicago, U. S. A., July 29, 2013. |
40 | H. Ohno, "Two and three terminal non-volatile spintronics devices for VLSI applications", 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA), Taichung, Taiwan, July 22, 2013. |
41 | T. Ono, "Current-induced domain wall motion:", International French-US Workshop: Toward low power spintronic devices, San Diego, California, U.S.A., July 10, 2013. |
42 | M. Tanaka, "Recent progress of ferromagnetic semiconductors: Electron-induced n-type ferromagnetic semiconductor (In,Fe)As", 16th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2013), Jeju, Korea, July 3, 2013. |
43 | H. Ohno, "Current status and prospect of magnetic tunnel junction", 7th International Conferenece on Materials for Advanced Technologies (ICMAT), Singapore, July 1, 2013. |
44 | T. Endoh, "Innovative Si-based Integrated Electronic Systems - Novel Trend with 3D Structual Cell and Spintronics Technology -", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Seoul, Korea, June 26, 2013. |
45 | H. Ohno, "What We Can Learn from Ferromagnetism in Semiconductors", The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2013), Kanazawa, Japan, June 20, 2013. |
46 | Y. Miura, M. Tsujikawa, M. Shirai, "A first-principles study on magneto-crystalline anisotropy at interfaces of Fe with various non-magnetic metals", International Workshop of Computational Nano-Materials Design on Green Energy, Awaji, Japan, June 19, 2013. |
47 | M. Shirai, M. Tsujikawa, Y. Miura, "Ab inito study on magneto-crystalline anisotropy in Co-Fe/MgO junctions", International Workshop of Computational Nano-Materials Design on Green Energy, Awaji, Japan, June 19, 2013. |
48 | M. Shirai, M. Tsujikawa, Y. Miura, "First-principles study on magneto-crystalline anisotropy at Co-Fe-Al/MgO interfaces", JSPS York-Tohoku Research Symposium on "Magnetic Materials and Spintronic devices", York, UK, June 11, 2013. |
49 | M. Oogane, H. Saruyama, Y. Kurimoto, H. Naganuma and Y. Ando, "Magnetic tunnel junctions with perpendicularly magnetized L10-ordered MnAl electrode", JSPS York-Tohoku Research Symposium on "Magnetic Materials and Spintronic devices", York, UK, June 10, 2013. |
50 | T. Endoh, "Spintronics Based NV-Memory/Logic for High Performance & Low Power Systems", 2013 Symposium on VLSI Technology, Kyoto, Japan, June 10, 2013. |
51 | T. Hanyu, "MTJ-Based Nonvolatile Logic-in-Memory Architecture for Ultra-Low-Power VLSI Chips", 2013 Spintronics Workshop on LSI, Kyoto, Japan, June 10, 2013. |
52 | H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/CoFeB/Ta/CoFeB/MgO recording structure with low critical current and high thermal stability", JSPS York-Tohoku Research Symposium on "Magnetic Materials and Spintronic devices", York, UK, June 10, 2013. |
53 | T. Hanyu, "Challenge of MTJ/MOS-Hybrid Logic-in-Memory Architecture for Nonvolatile VLSI Processor", 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 20, 2013. |
54 | T.Ono, "Current-induced domain wall motion: intrinsic pinning and two barrier stability", 9th International Symposium on Hysteresis Modeling and Micromagnetics, Taormina, Italy, May 13, 2013. |
55 | T.Ono, "Electrical control of magnetization", The 11th International Conference on Ferrites, Okinawa Convention Center, Okinawa, Japan, April 17, 2013. |
56 | T.Ono, "Current-induced magnetic domain wall motion:Intrinsic pinning and two barrier stability", Newspin 3 Conference, Mainz, Germany, April 5, 2013. |
Center for Spintronics Integrated Systems, Tohoku University
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Center for Spintronics Integrated Systems