1 | H. Ohno, "Spintronics Device for Stand-by Power Free Nonvolatile CMOS VLSI", American Physical Society, March Meeting, 2012/3/2. |
2 | H. Ohno, "Ferromagnetism in Semiconductors", 19th Korean Conference on Semiconductors, 2012/2/16. |
3 | H. Ohno, "Perpendicular CoFeB-MgO for Spintronics Applications", Magnetic Single Nano-Object Workshop and School (M-SNOWS), 2012/2/9. |
4 | M.Odaka, "SPRAM (SPin-transfer torque RAM) Technology for Environmentally-friendly Social Innovation", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/3. |
5 | T. Ohsawa, H. Koike, T. Hanyu, S. Ikeda, H. Ohno, and T. Endoh, "Proposal of New MTJ-Based Nonvolatile Memories", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/3. |
6 | T. Hanyu, "Panel Discussion: Spintronics-based VLSIs, What remains to be done?", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/3. |
7 | T. Hanyu, "High-Density Ternary Content-Addressable Memory Using MTJ-Based Nonvolatile Logic-in-Memory Architecture", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/3. |
8 | T. Endoh, "Restracturing of Memory Hierarchy in Electrical System and No-Standby-Power Nonvolatile Logic with STT-RAM Technology", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/3. |
9 | M. Hayashi, J. Kim, J. Shiha, S. Mitani, Y. Nakatani, S. Fukami, M. Yamanouchi, and H. Ohno, "Current induced magnetization dynamics in CoFeB/MgO nanostructures", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
10 | H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, and H. Ohno, "Thermal stability factor of CoFeB/MgO perpendicular magnetic tunnel junctions", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
11 | M. Oogane, M. Hosoda, H. Saruyama, N. I. Khan, G. Kim, N. Inami, H. Naganuma and Y. Ando, "Magnetic properties and tunnel magneto-resistance effect of perpendicularly magnetized L10-ordered alloys", The 2nd CSIS International Symposium on Spintronics-based VLSIs and The 8th RIEC International Workshop on Spintronics, 2012/2/2. |
12 | M. Tanaka, P. N. Hai,and L. D. Anh, "A new Fe-based n-type electron-induced ferromagnetic semiconductor:(In,Fe)As", 2nd International Workshop on Magnetic Materials and Nanostructures, 2012/1/ 10-13. |
13 | S. Ikeda, "Recent progress of magnetic tunnel junctions for spintronics-based VLSIs", SEMI Technology Symposium (STS) 2011, 2011/12/8. |
14 | M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno, "CoFeB-MgO system for spintronic devices", The 7th Taiwan International Conference on Spintronics, 2011/12/2-5. |
15 | H. Ohno, "Spintronic-based Nonvolatile CMOS VLSI", Joint Polish-Japanese Workshop, Spintronics from new materials to applications, 2011/11/18. |
16 | F. Matsukura, "Electric-field effects on Thin Ferromagnetic Layers", Joint Polish-Japanese Workshop Spintronics – from new materials to applications, 2011/11/16. |
17 | S. Ohya, I. Muneta, K. Takata, Y. Xin, P. N. Hai, and M. Tanaka, "Valence-band structure of (III,Mn)As ferromagnetic semiconductors", Joint Polish-Japanese Workshop "Spintronics - from new materials to applications", 2011/11/15-18. |
18 | P. N. Hai and M. Tanaka, "Top-down and bottom-up fabrication of nano-scale spintronic devices and their spin-dependent transport characteristics", 3rd International Workshop on Nanotechnology and application (IWNA 2011), 2011/11/10-12. |
19 | T. Hanyu, "MTJ-based Nonvolatile Logic-in-Memory Architecture and Its Application", The 11th Non-Volatile Memory Technology Symposium (NVMTS 2011), 2011/11/9. |
20 | N.Kasai, S.Ikeda, T.Hanyu, T.Endo, H.Ohno, "Embedded MRAM Technology for Logic VLSI Application", The 11th Non-Volatile Memory Technology Symposium (NVMTS2011), 2011/11/7. |
21 | H. Ohno, "Nonvolatile CMOS Circuits using Magnetic Tunnel Junction", 2nd Berkeley Symposium on Energy Efficient Electronic Systems, 2011/11/4. |
22 | T. Endoh, A. Nitayama, G. Jeong, L. Tran, J. Zahurak, J. Roh, M.-J. Tsai, "Impact of Vertical Structured devices for Future Nano LSI", AVS 58th International Symposium and Exhibition, 2011/10/31. |
23 | H. Ohno, "Spintronics-based LSI: A Route to Stand-by Power Free Society", Tohoku University 4th International Symposium, 2011/10/27. |
24 | T. Endoh, "3D Vertical Structured Memory and Spintoronics Memory Technology", 1st Annual World Congress of Nano-S&T, 2011/10/23. |
25 | S. Ikeda, "Advanced magnetic tunnel junctions based on CoFeB/MgO interfacial perpendicular anisotropy", SEMATECH 8th International Symposium on Advanced Gate Stack, 2011/10/20. |
26 | T. Endoh, "Vertical Structured Cells and Vertical Stacked Cellsfor Nano-Generation High Density Memory", 220th ECS Meeting, 2011/10/10. |
27 | T. Endoh, "Impact of Vertical Structured Devices and Spintronic Devices for Future Nano LSI", International Workshop on Quantum Nanostructures and Nanoelectronics(QNN2011), 2011/10/4. |
28 | T. Endoh, "Session F-4: e-Flash (Area 4)", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/29. |
29 | T. Endoh, "Poster Session: Short Presentation Advanced Memory Technology (Area 4) ", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/29. |
30 | H. Ohno, "Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) –Present and Future-", 2011 International Conference on Solid State Devices and Materials (SSDM), 2011/9/28. |
31 | T. Endoh, "Panel Discussion: Sub-20nm STT-MRAM as a replacement for DRAM : Its Challenges and Opportunities", Samsung Semiconductor, 2011/9/23. |
32 | T. Endoh, "Main Forum: Recent Advances in Perpendicular STT-MRAM with High Scalability for Future Non-volatile Memory", Samsung Semiconductor, 2011/9/23. |
33 | H. Ohno, "Nonvolatile Spintronic-based CMOS VLSI", Nanoscience and Nanotechnology Conference (n&n11), 2011/9/22. |
34 | H. Ohno, "MgO-CoFeB Perpendicular Magnetic Tunnel Junction", Seminar of Center for Materials for Information and Technology, University of Alabama, 2011/9/9. |
35 | F. Matsukura, "1. Fundamentals of spin transport in semiconductors. 2. Spin transport in semiconductors", ASPIMATT school on "Advanced Spintronics Materials and Transport Phenomena", 2011/8/27. |
36 | H. Ohno, "Electric-field effects on magnetic semiconductors and metals", Workshop on Spin Transport in Solids, 2011/8/8. |
37 | H. Ohno, "Diluted magnetic semiconductors -An introduction-", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/1. |
38 | M. Tanaka, "Valence-band picture of GaMnAs obtained by resonant tunneling spectroscopy", 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), 2011/8/3. |
39 | Y. Miura, K. Abe, and M. Shirai, "Role of spin-flip scattering at interfaces of MgO-based magnetic tunnel junctions with Heusler alloys", 5th International Workshop on Spin Currents, 2011/7/27. |
40 | F. Matsukura, "Electric-field effects on magnetic properties of semiconductors and metals", 5th International Workshop on Spin Currents, 2011/7/26. |
41 | S. Ohya, K. Takata, I. Muneta, P. N. Hai, Y. Xin, and M. Tanaka, "Valence-band structure of the ferromagnetic semiconductor GaMnAs", 5th International Workshop on Spin Currents 2011, 2011/7/25. |
42 | H. Ohno, "Manipulating Magnetism in Semiconductors", UK Semiconductors 2011, 2011/7/7. |
43 | H. Ohno, "Nonvolatile CMOS VLSI with Spintronics", International Conference on Materials for Advanced Technologies (ICMAT2011), 2011/7/1. |
44 | H. Ohno, "MgO-CoFeB interface perpendicular anisotropy for spintronic devices", The European Conference on Physics of Magnetism (PM'11), 2011/6/29. |
45 | M. Shirai, Y. Miura, and K. Abe, "Non-collinear magnetic structures at Heusler alloy/MgO interfaces: A possible origin for the temperature dependence of tunneling magnetoresistance", JSPS York-Tohoku Research Symposium on Magnetic Materials and Spintronics, 2011/6/28. |
46 | H. Ohno, "Spintronics meets semiconductor integrated circuits", JSPS York-Tohoku Research Sympoisium on Magnetic Materials and Spintronics, 2011/6/27. |
47 | H. Ohno, "Electric-field effects on magnetic materials -From ferromagnetic semiconductors to CoFeB-", Magnetics and Optics Research International Symposium for New Storage Technology (MORIS), 2011/6/24. |
48 | T. Endoh, "Impact of Spintronics Devices with Vertical MOSFET Technology for Future Nano-VLSI", CMOS Emerging Technologies Meeting 2011, 2011/6/17. |
49 | T. Endoh, A. Nitayama, G. Jeong, L. Tran, J. Zahurak, J. Roh, M.-J. Tsai, "Will Emerging Non-Volatile Memories Finally Emerge? (Panel Discussion)", 2011 Symposium on VLSI Technology, 2011/6/14. |
50 | T. Hanyu, "MTJ-Based Nonvolatile Logic-in-Memory Architecture", 2011 Spintronics Workshop on LSI, 2011/6/13. |
51 | M. Tanaka, P. N. Hai, I. Muneta, and S. Ohya, "III-V based magnetic heterostructures and nanostructures: Bandstructure, spin dependent tunneling, and magnetoresistance", Sweden-Japan Workshop on Quantum Nanoelectronics (QNANO 2011), 2011/6/12-14. |
52 | T. Endoh, "Research and Development of Ultra-low Power Spintronics-based VLSIs", The Seventh International Nanotechnology Conference on Communication and Cooperation (INC7), 2011/5/18. |
53 | K. Kinoshita, "Challenges for Non-Volatile Memory & Logic Manufacturing Utilizing Magnetic Tunnel Junction on 300 mm Wafer", GLSVLSI2011, 2011/5/3. |
54 | T. Hanyu, "Instant Power-On Nonvolatile FPGA Based on MOS/MTJ-Hybrid Circuitry", GLSVLSI2011, 2011/5/3. |
55 | H. Ohno, "Perpendicular Easy-Axis MgO-CoFeB Magnetic Tunnel Junction", 2011IEEE International Magnetics Conference, 2011/4/28. |
56 | S. Ohya, I. Muneta, K. Takata, P. Nam Hai, and Masaaki Tanaka, "Resonant tunneling spectroscopy and valence-band picture of the ferromagnetic semiconductor GaMnAs", International Magnetics Conference 2011 (Intermag 2011), 2011/4/26. |
57 | H. Ohno, "Interaction between Spintronics and Nanoelectronics devices", 2011 Frontier of Spintronics / Nanoelectronics workshop, 2011/4/24. |
58 | H. Ohno, "Perpendicular Anistropy at MgO-CoFeB Interface for High Performance Spintronics Devices", Korean Physical Society, 2011/4/14. |
Center for Spintronics Integrated Systems, Tohoku University
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