*:Peer reviewed papers
* 1 |
T. Kawahara, Challenges toward gigabit-scale spin-transfer torque random access memory and beyond for normally off, green information technology infrastructure (Invited), Journal of Applied Physics Vol.109 p.07D325, March 2011. |
* 2 |
K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H.D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, and H. Ohno, Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures, Journal of Applied Physics 109 (2011) 07C711 (3 pages), March 2011. |
* 3 |
M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, and H. Ohno, Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure, Journal of Applied Physics 109 (2011) 07C712 (3 pages), March 2011. |
* 4 |
M. Tsujikawa, S. Haraguchi, T. Oda, Y. Miura, and M. Shirai, A comparative ab initio study on electric-field dependence of magnetic anisotropy in MgO/Fe/Pt and MgO/Fe/Au films, Journal of Applied Physics 109 (2011) 07C707 (3 pages), March 2011. |
* 5 |
S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno, Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire, Applied Physics Letters vol.98, 082504, 2011(3 pages), Feb. 2011. |
* 6 |
T. Kawahara Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing IEEE Design and Test vol. 28 no. 1, pp.52-63, Jan. 2011. |
* 7 |
Kazunaga Ono, Norikazu Ohshima, Kazuya Goto, Hiroki Yamamoto, Tadashi Morita, Keizo Kinoshita, Tatsuo Ishijima, and Hirotaka Toyoda, Effect of O- Ion Beam Irradiation during RF-Magnetron Sputtering on Characteristics of CoFeB.MgO Magnetic Tunnel Junctions, Japanese Journal of Applied Physics.vol. 50, pp. 023001, Feb. 2011. |
* 8 |
K. Mizunuma, M. Yamanouchi, S. Ikeda, H. Sato, H. Yamamoto, H. D. Gan, K. Miura, J. Hayakawa, F. Matsukura, and H. Ohno, Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers, Applied Physics Express,4 (2011) 023002 (3 pages), Feb. 2011. |
* 9 |
S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno, Magnetic Anisotropy Modulation in Ta/CoFeB/MgO Structyre by Electric Fields, Journal of Physics Conference Series,266, 012092, Jan. 2011. |
* 10 |
M. Endo, F. Matsukura, and H. Ohno, Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As, Applied Physics Letters, 97, 222501, Nov. 2010 |
* 11 |
M. Hayashi, S. Kasai and S. Mitani, Time Resolved Inductive Detection of Domain Wall Dynamics in Magnetic Nanowires, Applied Physics Express, vol. 3 pp. 113004-(1)-(3), Nov. 2010. |
* 12 |
Shunsuke Fukami, Tetsuhiro Suzuki, Hironobu Tanigawa, Norikazu Ohshima, and Nobuyuki Ishiwata, Stack Structure Dependence of Co/Ni multilayer for current-induced domain wall motion, Applied Physics Express, vol.3, pp.113002, Oct. 2010. |
* 13 |
D. Chiba, F. Matsukura, and H. Ohno, Electrically defined ferromagnetic nano-dots, Nano Letters, 10, pp. 4505-4508, Oct. 2010. |
* 14 |
Keizo Kinoshita, Hiroaki Utsumi, Katsumi Suemitsu, Hiromitsu Hada, and Tadahiko Sugibayashi, Etching Magnetic Tunnel Junction with Metal Etchers, Japanese Journal of Applied Physics, Vol.49, pp. 08JB02, Aug. 2010. |
* 15 |
S. Ikeda,K. Miura,H. Yamamoto,K. Mizunuma,H. D. Gan,M. Endo,S. Kanai,J. Hayakawa,F. Matsukura and H. Ohno, A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction - , Nature Materials, Vol. 9 No.9 pp.721-724, July. 2010. |
* 16 |
A. Kanda, A. Suzuki, F. Matsukura, and H. Ohno, Domain wall creep in (Ga,Mn)As, Applied Physics Letters, Vol.97, 035304, July 2010. |
* 17 |
T. Endoh, F. Iga, S. Ikeda,K. Miura, J. Hayakawa, M. Kamiyanagi, H. Hasegawa, T. Hanyu and H. Ohno, The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide Semiconductor Circuits, Japanese Journal of Applied Physics, Vol.49, pp.04DM06-1-04DM06-5, Apr. 2010. |
* 18 |
F. Iga, M. Kamiyanagi, S. Ikeda, K. Miura, J. Hayakawa, H. Hasegawa, T. Hanyu, H. Ohno, T. Endoh, Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits, IEICE Transacions on Electronics, Vol.E93-C, No.5, pp.608-613, May 2010. |
* 19 |
M. Kamiyanagi, F. Iga, S. Ikeda, K. Miura, J. Hayakawa, H. Hasegawa, T. Hanyu, H. Ohno, T. Endoh, Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit, IEICE Transacions on Electronics, Vol.E93-C, No.5, pp.602-607, May 2010. |
* 20 |
M. Endo, S. Kanai, S. Ikeda, F. Matsukura, and H. Ohno, Electric field effects on thickness dependent magnetic anisotropy of sputteres MgO/Co40Fe40B20/Ta structures, Applied Physics Letters, Vol.96, 21, 212503, May 2010. |
* 21 |
D. Chiba, Y. Nakatani, F. Matsukura, and H. Ohno, Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy, Applied Physics Letters, Vol.96, 19, 192506, May 2010. |
* 22 |
H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, H. Hasegawa, F. Matsukura, T. Ohkubo, K. Hono, and H. Ohno, Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions, Applied Physics Letters, Vol.96, 192507, May 2010. |
* 23 |
Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka, Valence-Band Structure of Ferromagnetic Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy, Physical Review Letters, 104, 167204, Apr. 2010. |
* 24 |
K. Mizunuma, S. Ikeda, H. Yamamoto, H. D. Gan, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, H. Ohno, CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio, Japanese Journal of Applied Physics, Vol.49, 04DM04, Apr. 2010. |
* 25 |
S. Matsunaga, M. Natsui, K. Hiyama, T. Endoh, H. Ohno, and T. Hanyu, Fine-Grained Power-Gating Scheme of a Metal-Oxide-Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial, Japanese Journal of Applied Physics, Vol. 49, no. 4, pp. 04DM05-1~04DM05-5, Apr. 2010. |
*:Peer reviewed papers
* 1 |
石垣隆士, 磁性体メモリ最新動向と多値スピン注入MRAM(MLC-SPRAM), 信学技報,信学技報 Vol. 110 No. 274 P. 11-15, 2010年11月. |
2 | 池田正二,水沼広太朗,三浦勝哉,山本浩之,山ノ内路彦,小泉遼平,甘華東,佐藤英夫,遠藤将起,金井駿,早川純,松倉文礼,大野英男, 垂直磁気異方性電極磁気トンネル接合の進展, 応用電子物性分科会誌, vol. 16,No.4, pp.128-133, 2010年10月. |
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